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HANBit
HMF4M32M4GL
FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V Part No. HMF4M32M8GL GENERAL DESCRIPTION
The HMF4M32M8GL is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module's 8bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5 V DC power supply and all inputs and outputs are TTLcompatible.
FEATURES
w Access time : 75, 90 and 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 5V 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000-write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotect ion w The used device is MX29F016 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -75 -90 -120 19 20 21 22 23 M 24 Vss /BANKE1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /WE0
PIN ASSIGNMENT
SYMBOL PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /WE2 NC DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ31 /WE3 NC /RESET A19 /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL /BANK-E0 A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A20 A21 Vss
/RY_BY DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE1 NC DQ16
OPTION
w Timing 75ns access 90ns access 120ns access w Packages 72-pin SIMM
MARKING
72-PIN SIMM TOP VIEW
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FUNCTIONAL BLOCK DIAGRAM
HMF4M32M4GL
DQ0 - DQ31 A0 - A20 /WE0
32 21 A0-20 DQ 0-7 /WE /OE /CE RY-BY /Reset DQ 0-7 /WE /OE /CE RY-BY /Reset
A0-20
DQ 0-7
U1
U5
A0-20 DQ 0-7 /WE1 /WE /OE /CE RY-BY /Reset
A0-20 /WE /OE /CE RY-BY /Reset DQ 0-7
DQ 8-15
U2
U6
A0-20 DQ0-7 /WE2 /WE /OE /CE RY-BY /Reset
A0-20 DQ0-7 /WE /OE /CE RY-BY /Reset
DQ 16-23
U3
U7
A0-20 /WE3 /OE /BANK-E0 /RY_BY /Reset /WE /OE /CE RY-BY /Reset DQ0-7
A0-20 /WE /OE /CE RY-BY /Reset DQ0-7
DQ 24-31
U4
U8
/BANK-E1
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TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE or ERASE NOTE: X means don't care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D
HMF4M32M4GL
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +150 oC
Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those i ndicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for 5% device supply voltage Vcc for 10% device supply voltages Ground SYMBOL Vcc Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0
DC AND OPERATING CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress
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TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH,
SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 VLKO
MIN
MAX 1.0 1.0
UNITS A A V
2.4 0.45 40 60 1.0 3.2 4.2
V mA mA mA V
/CE= VIH
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3. Maximum Icc current specifications are tested with Vcc=Vcc max
HMF4M32M4GL
ERASE AND PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 1 7 28.8 MAX. Excludes 00H programming 8 300 86.4 sec prior to erasure s sec Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS
TSOP CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 6 8.5 7.5 7.5 12 9 pF pF pF MIN MAX UNIT
Notes : Test conditions TA = 25o C, f=1.0 MHz.
AC CHARACTERISTICS u Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 70 40 20 20 90 40 20 20 ns ns ns ns Read Cycle Time /CE = V IL Max 70 90 ns Min 70 90 ns DESCRIPTION TEST SETUP -75 -90 UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, 30 CL (Including jig capacitance) 100 pF 75 ALL OTHERS 1TTL gate UNIT
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Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 5 0.0 - 3.0 1.5 1.5
HMF4M32M4GL
20 0.45-2.4 0.8 2.0 ns V V V
5.0V
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
u Write (Erase/Program) Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 STANDARD tWC tAS tAH tDS tDH tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time
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DESCRIPTION
-75
-90
UNIT
Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time
Min Min Min Min Min Min Min Min Min Min Typ Typ Min
70 0 40 40 0 0 0 0 40 20 7 1 50
90 0 45 45 0 0 0 0 45 20 7 1 50
ns ns ns ns ns ns ns ns ns ns s Sec s
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2. This timing is only for Sector Protect operations
HMF4M32M4GL
uWrite(Erase/Program) Operations Alternate /CE Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 70 0 40 40 0 0 0 0 0 40 20 7 1 90 0 45 45 0 0 0 0 0 45 20 7 1 Ns ns ns ns ns ns ns ns ns ns ns s sec -75 -90 UNIT
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u READ OPERATIONS TIMING
HMF4M32M4GL
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HMF4M32M4GL
u CHIP/SECTOR ERASE OPERATION TIMINGS
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF4M32M4GL
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF4M32M4GL
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
HMF4M32M4GL
108mm 3.2 mm
6.35 mm
1
72
2.03 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm
-
2.54 mm 0.25 mm MAX MIN
1.270.08 mm
Gold: 1.040.10 mm 1.27 mm Solder: 0.9140.10 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component Number 8EA 8EA 8EA
Vcc
SPEED
HMF4M32M8GL-75 HMF4M32M8GL-90 HMF4M32M8GL-120
16MByte 16MByte 16MByte
4MX 32bit 4MX 32bit 4MX 32bit
72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM
5V 5V 5V
75ns 90ns 120ns
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